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| MJD112 (NPN) MJD117 (PNP) Preferred Device Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features http://onsemi.com * Lead Formed for Surface Mount Applications in Plastic Sleeves * * * (No Suffix) Straight Lead Version in Plastic Sleeves ("-1" Suffix) Electrically Similar to Popular TIP31 and TIP32 Series Pb-Free Packages are Available SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS, 20 WATTS MARKING DIAGRAMS 4 12 YWW J11xG 3 DPAK CASE 369C MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25C Derate above 25C Total Power Dissipation (Note1) @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range - Continuous - Peak Symbol VCEO VCB VEB IC IB PD PD 1.75 0.014 TJ, Tstg -65 to +150 Max 100 100 5 2 4 50 20 0.16 Unit Vdc Vdc Vdc Adc mAdc W W/C W W/C C 4 YWW J11xG 1 2 3 DPAK-3 CASE 369D THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 1) Symbol RqJC RqJA Max 6.25 71.4 Unit C/W C/W Y WW x G = Year = Work Week = 2 or 7 = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2006 1 January, 2006 - Rev. 7 Publication Order Number: MJD112/D MJD112 (NPN) MJD117 (PNP) t, TIME ( s) IIII I I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIII II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I II II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 2) (IC = 30 mAdc, IB = 0) Collector Cutoff Current (VCE = 50 Vdc, IB = 0) VCEO(sus) ICEO ICBO IEBO Vdc 100 - - - - - - mAdc mAdc 20 20 2 Collector Cutoff Current (VCB = 100 Vdc, IE = 0) Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) mAdc mAdc Collector-Cutoff Current (VCB = 80 Vdc, IE = 0) Emitter-Cutoff Current (VBE = 5 Vdc, IC = 0) ICBO IEBO 10 2 mAdc ON CHARACTERISTICS DC Current Gain (IC = 0.5 Adc, VCE = 3 Vdc) (IC = 2 Adc, VCE = 3 Vdc) (IC = 4 Adc, VCE = 3 Vdc) hFE - 500 1000 200 - - - - - 12,000 - 2 3 4 Collector-Emitter Saturation Voltage (IC = 2 Adc, IB = 8 mAdc) (IC = 4 Adc, IB = 40 mAdc) Base-Emitter Saturation Voltage (IC = 4 Adc, IB = 40 mAdc) Base-Emitter On Voltage (IC = 2 Adc, VCE = 3 Vdc) VCE(sat) Vdc VBE(sat) VBE(on) Vdc Vdc 2.8 DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 0.75 Adc, VCE = 10 Vdc, f = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) fT MHz pF 25 - Cob MJD117 MJD112 - - 200 100 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. *These ratings are applicable when surface mounted on the minimum pad sizes recommended. RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA TUT V2 APPROX +8 V 0 V1 APPROX -12 V tr, tf 10 ns DUTY CYCLE = 1% RB 51 D1 +4V 8k 60 VCC -30 V RC SCOPE 4 ts 2 tf tr VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 1 0.8 0.6 0.4 PNP NPN 0.1 td @ VBE(off) = 0 V 25 ms FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. 0.2 0.04 0.06 0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP) 2 4 Figure 1. Switching Times Test Circuit http://onsemi.com 2 Figure 2. Switching Times MJD112 (NPN) MJD117 (PNP) r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 D = 0.5 0.2 0.1 0.05 0.01 SINGLE PULSE RqJC(t) = r(t) RqJC RqJC = 6.25C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 23 5 10 t, TIME OR PULSE WIDTH (ms) 20 30 50 100 200 300 500 1000 Figure 3. Thermal Response ACTIVE-REGION SAFE-OPERATING AREA TA TC 2.5 25 500 ms 1 ms 5 ms dc BONDING WIRE LIMITED THERMAL LIMIT SECOND BREAKDOWN LIMIT TJ = 150C CURVES APPLY BELOW RATED VCEO 2 3 5 7 10 20 30 50 70 100 200 PD, POWER DISSIPATION (WATTS) 100 ms IC, COLLECTOR CURRENT (AMP) 10 7 5 3 2 1 0.7 0.5 0.3 0.2 0.1 2 20 1.5 15 TA SURFACE MOUNT TC 1 10 0.5 5 0 0 25 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 75 100 T, TEMPERATURE (C) 125 15 Figure 4. Maximum Rated Forward Biased Safe Operating Area Figure 5. Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5 and 6 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 200 TC = 25C C, CAPACITANCE (pF) 100 70 50 Cob 30 Cib 20 PNP NPN 10 0.04 0.06 0.1 0.2 0.4 0.6 1 2 4 6 10 20 40 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance http://onsemi.com 3 MJD112 (NPN) MJD117 (PNP) TYPICAL ELECTRICAL CHARACTERISTICS NPN MJD112 6k TJ = 125C 4k hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 3k 2k 25C VCE = 3 V 4k 3k 2k 25C 6k TC = 125C VCE = 3 V PNP MJD117 1k 800 600 400 300 0.04 0.06 -55 C 1k 800 600 400 300 0.04 0.06 -55 C 0.1 0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP) 2 4 0.1 0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP) 2 4 Figure 7. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3.4 TJ = 125C 3 IC = 0.5 A 2.6 2.2 1.8 1.4 1 0.6 0.1 0.2 0.5 1 2 5 10 20 50 100 3.4 3 2.6 2.2 1.8 1.4 1 0.6 0.1 0.2 0.5 1 2 5 10 20 50 100 IC = 0.5 A 1A 2A 4A TJ = 125C 1A 2A 4A IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 8. Collector Saturation Region 2.2 TJ = 25C 1.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 250 V, VOLTAGE (VOLTS) 1.8 VBE(sat) @ IC/IB = 250 2.2 TJ = 25C 1.4 VBE @ VCE = 3 V 1.4 VBE @ VCE = 3 V 1 VCE(sat) @ IC/IB = 250 0.6 1 VCE(sat) @ IC/IB = 250 0.6 0.2 0.04 0.06 0.1 0.2 0.4 0.6 1 2 4 0.2 0.04 0.06 0.1 0.2 0.4 0.6 1 2 4 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 9. "On Voltages http://onsemi.com 4 MJD112 (NPN) MJD117 (PNP) NPN MJD112 +0.8 0 -0.8 25C TO 150C -1.6 -2.4 -3.2 -4 qVC FOR VBE *qVC FOR VCE(sat) -55 C TO 25C 25C TO 150C -55 C TO 25C 0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP) 2 4 *APPLIED FOR IC/IB < hFE/3 +0.8 0 -0.8 -1.6 -2.4 -3.2 -4 qVB FOR VBE -55 C TO 25C *qVC FOR VCE(sat) *APPLIES FOR IC/IB < hFE/3 25C TO 150C PNP MJD117 V, TEMPERATURE COEFFICIENTS (mV/C) V, TEMPERATURE COEFFICIENTS (mV/C) -55 C TO 25C 25C TO 150C -4.8 0.04 0.06 0.1 -4.8 0.04 0.06 0.1 0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP) 2 4 Figure 10. Temperature Coefficients 105 IC, COLLECTOR CURRENT ( A) IC, COLLECTOR CURRENT ( A) 104 103 102 TJ = 150C 101 100 10-1 -0.6 -0.4 100C 25C -0.2 0 +0.2 +0.4 +0.6 +0.8 +1 VBE, BASE-EMITTER VOLTAGE (VOLTS) +1.2 +1.4 REVERSE FORWARD 105 104 103 102 101 100 10-1 +0.6 +0.4 TJ = 150C 100C 25C +0.2 0 -0.2 -0.4 -0.6 -0.8 -1 VBE, BASE-EMITTER VOLTAGE (VOLTS) -1.2 -1.4 REVERSE FORWARD VCE = 30 V VCE = 30 V Figure 11. Collector Cut-Off Region PNP COLLECTOR NPN COLLECTOR BASE BASE 8k 120 8k 120 EMITTER EMITTER Figure 12. Darlington Schematic http://onsemi.com 5 MJD112 (NPN) MJD117 (PNP) ORDERING INFORMATION Device MJD112 MJD112G MJD112-001 MJD112-1G MJD112RL MJD112RLG MJD112T4 MJD112T4G MJD117 MJD117G MJD117-001 MJD117-1G MJD117T4 MJD117T4G Package Type DPAK DPAK (Pb-Free) DPAK-3 DPAK-3 (Pb-Free) DPAK DPAK (Pb-Free) DPAK DPAK (Pb-Free) DPAK DPAK (Pb-Free) DPAK-3 DPAK-3 (Pb-Free) DPAK DPAK (Pb-Free) 369C 2500 Tape & Reel 369D 75 Units / Rail 369C 2500 Tape & Reel 1800 Tape & Reel 369D 369C 75 Units / Rail Package Shipping For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 MJD112 (NPN) MJD117 (PNP) PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- -T- B V R 4 SEATING PLANE C E A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) T DIM A B C D E F G H J K L R S U V Z M SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MJD112 (NPN) MJD117 (PNP) PACKAGE DIMENSIONS DPAK-3 CASE 369D-01 ISSUE B B V R 4 C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- Z A 3 S -T- SEATING PLANE 1 2 K F D G 3 PL J H 0.13 (0.005) M DIM A B C D E F G H J K R S V Z T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 8 MJD112/D |
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